jan 2009. rev. 0 1/5 copyright @winsemi semiconductor co.,ltd.,all rights reserved. s b r 1300 3b 3 high voltage fast-switching npn power transistor features very high switching speed high voltage capability wide reverse bias soa general description this device is designed for high voltage, high speed switching characteristics required such as lighting system, switching mode power supply. absolute maximum ratings symbol parameter test conditions value units v ces collector-emitter voltage v be = 0 700 v v ceo collector-emitter voltage i b = 0 400 v v ebo emitter-base voltage i c = 0 9.0 v i c collector current 1.5 a i cp collector pulse current 3.0 a i b base current 0.75 a i bm base peak current t p = 5ms 1.5 a p c total dissipation at tc* = 25 20 w total dissipation at ta* = 25 0.8 t j operation junction temperature - 40 ~ 150 t stg storage temperature - 40 ~ 150 tc: case temperature (good cooling) ta: ambient temperature (without heat sink) thermal characteristics symbol parameter value units r jc thermal resistance junction to case 3.12 /w r ja thermal resistance junction to ambient 89 /w
2/5 . s b r 1300 3b 3 electrical characteristics (t c =25 unless otherwise noted) symbol parameter test conditions value units min typ max v ceo(sus) collector-emitter breakdown voltage ic=10ma,ib=0 400 - - v v ce(sat) collector-emitter saturation voltage ic=0.5a,ib=0.1a ic=1.0a,ib=0.25a ic=1.5a,ib=0.5a - - 0.3 0.5 1.0 v v be(sat) base-emitter saturation voltage ic=0.5a,ib=0.1a ic=1.0a,ib=0.25a - - 1.0 1.2 v i cbo collector-base cutoff current (vbe=-1.5v) vcb=700v vcb=700v, tc=100 - - 1.0 5.0 ma h fe dc current gain vce=2v,ic=0.5a vce=2v, ic=1.0a 10 5 - - 30 25 ton ts tf resistive load turn-on time storage time fall time v cc =125v ,ic=1a i b1 =0.2a , i b2 =-0.5a tp=25 ? - 0.2 1.5 0.15 1.0 3.0 0.4 ? ts tf inductive load storage time fall time v cc =15v ,ic=1a i b1 =0.2a , i b2 =-0.5a l=0.35mh,vclamp=300v - - 1.2 0.12 4.0 0.3 ? ts tf inductive load storage time fall time v cc =15v ,ic=1a i b1 =0.2a , i b2 =-0.5a l=0.35mh,vclamp=300v tc=100 - - 2.4 0.15 5.0 0.4 ? note: pulse test : pulse width 300, duty cycle 2%
3/5 s b r 1300 3b 3 fig. 1 dc current gain fig. 2 saturation voltage fig. 3 switching time fig. 4 safe operation area fig.5 power derating
4/5 . s b r 1300 3b 3 resistive load switching test circuit inductive load switching & rbsoa test circuit
5/5 s b r 1300 3b 3 to-126 package dimension 1 3
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